2008
Preparation and characterisation of carbon films prepared from HMDSZ/Methane/Nitrogen or Hydrogen mixture using PECVD
KELAR, Lukáš; Vilma BURŠÍKOVÁ a Zdeněk BOCHNÍČEKZákladní údaje
Originální název
Preparation and characterisation of carbon films prepared from HMDSZ/Methane/Nitrogen or Hydrogen mixture using PECVD
Název česky
Preparation and characterisation of carbon films prepared from HMDSZ/Methane/Nitrogen or Hydrogen mixture using PECVD
Autoři
KELAR, Lukáš; Vilma BURŠÍKOVÁ a Zdeněk BOCHNÍČEK
Vydání
2nd Central European Symposium on Plasma Chemistry, 2008
Další údaje
Jazyk
angličtina
Typ výsledku
Konferenční abstrakt
Obor
10305 Fluids and plasma physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Označené pro přenos do RIV
Ne
Organizační jednotka
Přírodovědecká fakulta
UT WoS
Klíčová slova anglicky
Preparation; characterisation; carbon films; HMDSZ; Methane; Nitrogen; Hydrogen; mixture; PECVD
Štítky
Příznaky
Mezinárodní význam
Změněno: 14. 1. 2009 14:15, Mgr. Adrian Stoica, Ph.D.
V originále
Carbon films are often used in various applications. In case of HDLC (amorphous hydrogenated carbon) there may be a problem with internal stress in the film, which can cause cracking or delamination of all the film. It is known that silicon incorporation into the film decreases the internal stress in the film. The aim of the present work was to study the effect of the negative self-bias voltage and the HMDSZ (Si2NC6H19) content in the deposition mixture on the properties of thin films prepared from HMDSZ/methane/nitrogen or hydrogen or argon mixtures.
Česky
Carbon films are often used in various applications. In case of HDLC (amorphous hydrogenated carbon) there may be a problem with internal stress in the film, which can cause cracking or delamination of all the film. It is known that silicon incorporation into the film decreases the internal stress in the film. The aim of the present work was to study the effect of the negative self-bias voltage and the HMDSZ (Si2NC6H19) content in the deposition mixture on the properties of thin films prepared from HMDSZ/methane/nitrogen or hydrogen or argon mixtures.
Návaznosti
| GA202/07/1669, projekt VaV |
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