2008
Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry
MARŠÍK, Přemysl, Adam URBANOWICZ, Klara VINOKUR, Yoel COHEN, Mikhail BAKLANOV et. al.Základní údaje
Originální název
Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry
Název česky
Změny UV optických vlastností plazmou poškozených low-k dielektrik pro skaterometrii poškození na stěnách
Autoři
MARŠÍK, Přemysl (203 Česká republika, garant), Adam URBANOWICZ (616 Polsko), Klara VINOKUR (376 Izrael), Yoel COHEN (376 Izrael) a Mikhail BAKLANOV (56 Belgie)
Vydání
1079E. Warrendale, Materials Research Society Symposium Proceedings, 6 s. 2008
Nakladatel
Materials Research Society
Další údaje
Jazyk
angličtina
Typ výsledku
Stať ve sborníku
Obor
10302 Condensed matter physics
Stát vydavatele
Spojené státy
Utajení
není předmětem státního či obchodního tajemství
Odkazy
Kód RIV
RIV/00216224:14310/08:00027726
Organizační jednotka
Přírodovědecká fakulta
ISBN
978-1-60511-077-6
Klíčová slova anglicky
low-k; plasma damage; scatterometry
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 14. 1. 2010 14:49, Mgr. Přemysl Maršík, Ph.D.
V originále
Porous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.
Česky
Porous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.
Návaznosti
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