2008
Optical characteristics and UV modification of low-k materials
MARŠÍK, Přemysl a Mikhail BAKLANOVZákladní údaje
Originální název
Optical characteristics and UV modification of low-k materials
Název česky
Optické vlastnosti a UV modifikace low-k materiálů
Autoři
MARŠÍK, Přemysl a Mikhail BAKLANOV
Vydání
Beijing, 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. od s. 765-768, 4 s. 2008
Nakladatel
IEEE
Další údaje
Jazyk
angličtina
Typ výsledku
Stať ve sborníku
Obor
10302 Condensed matter physics
Stát vydavatele
Čína
Utajení
není předmětem státního či obchodního tajemství
Kód RIV
RIV/00216224:14310/08:00027845
Organizační jednotka
Přírodovědecká fakulta
ISBN
978-1-4244-2185-5
UT WoS
000265971001036
Klíčová slova anglicky
low-k; ellipsometry; UV-cure
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 9. 7. 2009 09:57, Mgr. Přemysl Maršík, Ph.D.
V originále
We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.
Česky
We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.
Návaznosti
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