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@proceedings{866345,
author = {Sládek, Petr and Sťahel, Pavel and Buršíková, Vilma},
booktitle = {23rd International Conference on Amorphous and Nanocrystalline Semiconductors},
keywords = {thin films; SiGe; hydrogen; mechanical properties},
language = {eng},
title = {Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC},
url = {http://www.icans23.org},
year = {2009}
}
TY - CONF
ID - 866345
AU - Sládek, Petr - Sťahel, Pavel - Buršíková, Vilma
PY - 2009
TI - Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC
KW - thin films
KW - SiGe
KW - hydrogen
KW - mechanical properties
UR - http://www.icans23.org
N2 - In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the un-doped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were test by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bond-ing environment, related to different growth mechanism.
ER -
SLÁDEK, Petr, Pavel SŤAHEL a Vilma BURŠÍKOVÁ. Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC. In \textit{23rd International Conference on Amorphous and Nanocrystalline Semiconductors}. 2009.
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