| ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK, S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT a U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 1999, roč. 32, č. 9999, s. A224, 6 s. ISSN 0022-3727. |
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@article{205589,
author = {Zhuang, Y. and Holý, Václav and Stangl, J. and Darhuber, A.A. and Mikulík, Petr and Zerlauth, S. and Schäffler, F. and Bauer, G. and Darowski, N. and Lübbert, D. and Pietsch, U.},
article_location = {Velká Britanie},
article_number = {9999},
keywords = {quantum wires; SiGe; x-ray diffraction; GID},
language = {eng},
issn = {0022-3727},
journal = {J. Phys. D: Appl. Phys.},
title = {Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction},
url = {http://www.sci.muni.cz/~mikulik/Publications.html#ZhuangMikulikXTOP98},
volume = {32},
year = {1999}
}
TY - JOUR
ID - 205589
AU - Zhuang, Y. - Holý, Václav - Stangl, J. - Darhuber, A.A. - Mikulík, Petr - Zerlauth, S. - Schäffler, F. - Bauer, G. - Darowski, N. - Lübbert, D. - Pietsch, U.
PY - 1999
TI - Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction
JF - J. Phys. D: Appl. Phys.
VL - 32
IS - 9999
SP - A224
EP - A224
PB - IOP Publishing Ltd
SN - 00223727
KW - quantum wires
KW - SiGe
KW - x-ray diffraction
KW - GID
UR - http://www.sci.muni.cz/~mikulik/Publications.html#ZhuangMikulikXTOP98
N2 - Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
ER -
ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK, S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT a U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 1999, roč.~32, č.~9999, s.~A224, 6 s. ISSN~0022-3727.
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