2000
Analysis of Slightly Rough Thin Films by Optical Methods and AFM
FRANTA, Daniel; Ivan OHLÍDAL a Petr KLAPETEKZákladní údaje
Originální název
Analysis of Slightly Rough Thin Films by Optical Methods and AFM
Autoři
FRANTA, Daniel; Ivan OHLÍDAL a Petr KLAPETEK
Vydání
Mikrochim. Acta, Wien, Springer-Verlag, 2000, 0026-3672
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Rakousko
Utajení
není předmětem státního či obchodního tajemství
Odkazy
Impakt faktor
Impact factor: 1.303
Kód RIV
RIV/00216224:14310/00:00002233
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000086810800042
Klíčová slova anglicky
Spectroscopic Ellipsometry; Spectroscopic Reflectometry; Atomic Force Microscopy; Rough Thin Films
Štítky
Změněno: 22. 12. 2003 00:23, Mgr. Daniel Franta, Ph.D.
Anotace
V originále
In this paper the analysis of a family of rough silicon single crystal surfaces covered with native oxide layers is performed using a combined optical method based on a multisample treatment of the experimental data obtained using variable angle of spectroscopic ellipsometry and near normal spectroscopic reflectometry. Within this analysis the values of the thicknesses of the native oxide layers are determined together with the values of statistical parameters of roughness, i.e. with the rms values of the heights and the values of the autocorrelation lengths, for all the samples studied. For interpreting experimental data the perturbation Rayleigh-Rice theory and scalar diffraction theory are employed. By means of the results of the analysis achieved using both the theories limitations of the validity of these theories is discussed. The correctness of the values of the statistical parameters determined using the optical method is verified using AFM measurements.
Návaznosti
| GA202/98/0988, projekt VaV |
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| GV106/96/K245, projekt VaV |
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| VS96084, projekt VaV |
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