Výpis publikací

ZICH, Jan; Antonin SOJKA; Petr LEVINSKY; Martin MISEK; Kyo-Hoon AHN; Jiri NAVRATIL; Jiri HEJTMANEK; Karel KNIZEK; Václav HOLÝ; Dmitry NUZHNYY; Fedir BORODAVKA; Stanislav KAMBA a Cestmir DRASAR. Phonon properties and unconventional heat transfer in a quasi-two-dimensional Bi2O2Se crystal. Physical Review Materials. American Physical Society, 2025, roč. 9, č. 5, s. 1-10. ISSN 2475-9953. Dostupné z: https://doi.org/10.1103/PhysRevMaterials.9.054603.

PETR, Harcuba; Jana ŠMILAUEROVÁ; Miloš JANEČEK; Jan ILAVSKÝ a Václav HOLÝ. Determination of α lamellae orientation in a β-Ti alloy using electron backscatter diffraction. Journal of Applied Crystallography. Chester: International Union of Crystallography, 2024, roč. 57, č. 4, s. 1001-1010. ISSN 1600-5767. Dostupné z: https://doi.org/10.1107/S160057672400400X.

NAVRÁTIL, J.; Ondřej CAHA; J. KOPEČEK; P. ČERMÁK; J. PROKLEŠKA; Václav HOLÝ; V. SECHOVSKÝ; L. BENEŠ; K. CARVA; J. HONOLKA a Č. DRAŠAR. Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes. Materials Science and Engineering: B. Elsevier, 2024, roč. 301, March 2024, s. 1-10. ISSN 0921-5107. Dostupné z: https://doi.org/10.1016/j.mseb.2023.117148.

CECCHI, Stefano; Jamo MOMAND; Daniele DRAGONI; Abou El Kheir OMAR; Federico FAGIANI; Dominik KRIEGNER; Christian RINALDI; Fabrizio ARCIPRETE; Václav HOLÝ; Bart J. KOOI; Marco BERNASCONI a Raffaella CALARCO. Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae. Advanced Science. Wiley, 2024, roč. 11, č. 1, s. 1-11. ISSN 2198-3844. Dostupné z: https://doi.org/10.1002/advs.202304785.

MACKOVÁ, A.; A. JAGEROVÁ; O. LALIK; R. MIKŠOVÁ; D. POUSTKA; J. MISTRÍK; Václav HOLÝ; J. D. SCHUTTER; U. KENTSCH; P. MARVAN; A. AZAROV a A. GALECKAS. Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis. Applied Surface Science. Elsevier Science BV, 2023, roč. 610, February, s. 1-13. ISSN 0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2022.155556.

ZICH, Jan; Martin MÍŠEK; Václav HOLÝ; Karel CARVA; Jakub CÍŽEK; Jiří NAVRÁTIL; Patrik ČERMÁK; Petr KNOTEK; Kateřina CERMÁK ŠRAITROVÁ; Stanislav CICHOŇ; Jiří HEJTMÁNEK; Zdeněk JIRÁK a Cestmír DRAŠAR. FexBi2Se3 superconductivity, dimensional transport, and high electron mobility are associated with the natural nanostructure of Bi2Se3 single crystals. Physical Review B. American Physical Society, 2023, roč. 108, č. 12, s. 1-13. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.108.125308.

MIKŠOVÁ, R.; A. JAGEROVÁ; J. CAJZL; Václav HOLÝ; M. VRONKA a A. MACKOVÁ. Gradual modification of the YSZ structures by Au ion implantation and high-energy Si ion irradiation. Ceramics International. Elsevier, 2023, roč. 49, č. 18, s. 29659-29670. ISSN 0272-8842. Dostupné z: https://doi.org/10.1016/j.ceramint.2023.06.196.

ŠMILAUEROVÁ, Jana; Harcuba PETR; Jitka STRÁSKÁ; Josef STRÁSKÝ; Miloš JANEČEK; Jiří POSPÍŠIL; Jan ILAVSKÝ a Václav HOLÝ. Lamellae of alpha phase in a metastable beta-Ti alloy studied by small-angle x-ray scattering. Materials Characterization. New York: Elsevier, 2023, roč. 196, February, s. 1-15. ISSN 1044-5803. Dostupné z: https://doi.org/10.1016/j.matchar.2022.112615.

GABRIEL, Vít; Pavel KOCÁN; Sondes BAUER; Berkin NERGIS; Adriana RODRIGUES; Lukáš HORÁK; Xiaowei JIN; Reinhard SCHNEIDER; Tilo BAUMBACH a Václav HOLÝ. Effect of pulse laser frequency on PLD growth of LuFeO3 explained by kinetic simulations of in-situ diffracted intensities. Scientific Reports. Nature Research, 2022, roč. 12, č. 1, s. 1-8. ISSN 2045-2322. Dostupné z: https://doi.org/10.1038/s41598-022-09414-3.

MACKOVÁ, Anna; Petr MALINSKÝ; Adéla JAGEROVÁ; Romana MIKŠOVÁ; Ondrej LALIK; Pavla NEKVINDOVÁ; Jan MISTRÍK; Petr MARVAN; Zdenek SOFER; Václav HOLÝ; Jan David SCHUTTER; Ulrich KENTSCH; Alexander AZAROV a Augustinas GALECKAS. Energetic Au ion beam implantation of ZnO nanopillars for optical response modulation. Journal of physics D: Applied physics. Bristol, England: IOP Publishing Ltd., 2022, roč. 55, č. 21, s. 1-14. ISSN 0022-3727. Dostupné z: https://doi.org/10.1088/1361-6463/ac5486.

GABRIEL, Vít; Pavel KOCÁN a Václav HOLÝ. Growth-rate model of epitaxial layer-by-layer growth by pulsed-laser deposition. Physical Review E. American Physical Society, 2022, roč. 106, č. 3, s. 1-9. ISSN 2470-0045. Dostupné z: https://doi.org/10.1103/PhysRevE.106.035302.

MIKŠOVÁ, Romana; Petr MALINSKÝ; Mariapompea CUTRONEO; Václav HOLÝ; Zdeněk SOFER; Jakub CAJZL; Aurélien DEBELLE; Lech NOWICKI a Anna MACKOVÁ. Microstructural modifications induced in Si+-implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation. Physical Chemistry Chemical Physics. Royal Society of Chemistry, 2022, roč. 24, č. 10, s. 6290-6301. ISSN 1463-9076. Dostupné z: https://doi.org/10.1039/D1CP04901A.

VOLNÝ, Jiří; Kateřina CHARVÁTOVÁ; Martin VEIS; Václav HOLÝ; Martin VONDRÁČEK; Jan HONOLKA; Elen DUVERGER-NÉDELLEC; Jakub SCHUSSER; Sunil W. SOUZA; Jan MINÁR; James M PIENTKA; Alberto MARMODORO; Karel VÝBORNÝ a Klára UHLÍŘOVÁ. Single-crystal studies and electronic structure investigation of the room-temperature semiconductor NaMnAs. Physical Review B. College PK: American Physical Society, 2022, roč. 105, č. 12, s. "125204-1"-"125204-10", 10 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.105.125204.

STRÁNSKÁ MATĚJOVÁ, Jana; Alice HOSPODKOVÁ; Tereza KOŠUTOVÁ; Tomáš HUBÁČEK; Matěj HÝVL a Václav HOLÝ. V-pits formation in InGaN/GaN: influence of threading dislocations and indium content. Journal of Physics D: Applied Physics. Bristol, England: IOP Publishing Ltd., 2022, roč. 55, č. 25, s. 1-15. ISSN 0022-3727. Dostupné z: https://doi.org/10.1088/1361-6463/ac5c1a.

ŠRAITROVÁ, Kateřina; Jakub ČÍŽEK; Václav HOLÝ; Jana KAŠPAROVÁ; Tomáš PLECHÁČEK; Vladimír KUCEK; Jiří NAVRÁTIL; Anna KREJČOVÁ a Čestmír DRAŠAR. As-doped SnSe single crystals: Ambivalent doping and interaction with intrinsic defects. Physical Review B. College PK: American Physical Society, 2021, roč. 103, č. 8, s. "085203-1"-"085203-12", 12 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.103.085203.

MIKŠOVÁ, Romana; Adéla JAGEROVÁ; Petr MALINSKÝ; Petr HARCUBA; Jozef VESELY; Václav HOLÝ; Ulrich KENTSCH a Anna MACKOVÁ. Multi-direction channelling study of the Ag:YSZ nanocomposites prepared by ion implantation. Vacuum. Oxford: Pergamon-Elsevier Science Ltd, 2021, roč. 184, February, s. 1-11. ISSN 0042-207X. Dostupné z: https://doi.org/10.1016/j.vacuum.2020.109773.

MACKOVÁ, A.; S. FERNANDES; J. MATEJÍČEK; M. VILÉMOVÁ; Václav HOLÝ; M. O. LIEDKE; J. MARTAN; M. VRONKA; M. POTOČEK; P. BÁBOR; M. BUTTERLING; A. G. ATTALLAH; E. HIRSCHMANN; A. WAGNER a V. HAVRÁNEK. Radiation damage evolution in pure W and W-Cr-Hf alloy caused by 5 MeV Au ions in a broad range of dpa. Nuclear Materials and Energy. Elsevier, 2021, roč. 29, December, s. 101085-101099. ISSN 2352-1791. Dostupné z: https://doi.org/10.1016/j.nme.2021.101085.

STRÁNSKÁ, Jana; Lukáš HORÁK; Peter MINÁRIK; Václav HOLÝ; Ewa GRZANKA; Jaroslaw DOMAGALA a Michal LESZCZYŃSKI. Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations. Journal of Applied Crystallography. Chester: International Union of Crystallography, 2021, roč. 54, February, s. 62-71. ISSN 0021-8898. Dostupné z: https://doi.org/10.1107/S1600576720014764.

BAUER, Sondes; Adriana RODRIGUES; Lukáš HORÁK; Berkin NERGIS; Xiaowei JIN; Reinhard SCHNEIDER; Roland GRÖGER; Tilo BAUMBACH a Václav HOLÝ. Time-Resolved Morphology and Kinetic Studies of Pulsed Laser Deposition-Grown Pt Layers on Sapphire at Different Growth Temperatures by in Situ Grazing Incidence Small-Angle X-ray Scattering. Langmuir. Washington: American Chemical Society, 2021, roč. 37, č. 2, s. 734-749. ISSN 0743-7463. Dostupné z: https://doi.org/10.1021/acs.langmuir.0c02952.

GROSSAUER, Christian; Václav HOLÝ a Gunther SPRINGHOLZ. Entropy-controlled fully reversible nanostructure formation of Ge on miscut vicinal Si(001) surfaces. Physical Review B. College PK: The American Physical Society, 2020, roč. 102, č. 7, s. 1-13. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.102.075420.

HOLÝ, Václav; Sondes Trabelsi BAUER; Adriana RODRIGUES; Lukáš HORÁK; Xiaowei JIN; Reinhard SCHNEIDER a G. T. BAUMBACH. In situ grazing-incidence x-ray scattering study of pulsed-laser deposition of Pt layers. Physical Review B. College PK: The American Physical Society, 2020, roč. 102, č. 12, s. 1-15. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.102.125435.

MIKŠOVÁ, Romana; Petr MALINSKÝ; Petr HARCUBA; Jozef VESELÝ; Václav HOLÝ; Ulrich KENTSCH a Anna MACKOVÁ. Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Amsterdam: Elsevier, 2020, roč. 474, JUL, s. 29-34. ISSN 0168-583X. Dostupné z: https://doi.org/10.1016/j.nimb.2020.04.008.

MACKOVÁ, Anna; Adéla JAGEROVÁ; Petr MALINSKÝ; Mariapompea CUTRONEO; J. FLAKS; Pavla NEKVINDOVÁ; Alena MICHALCOVÁ; Václav HOLÝ a Tereza KOŠUTOVÁ. Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions. Physical Chemistry Chemical Physics. Cambridge: Royal Society of Chemistry, 2020, roč. 22, č. 41, s. 23563-23573. ISSN 1463-9076. Dostupné z: https://doi.org/10.1039/d0cp04119j.

BAUER, Sondes; Adriana RODRIGUES; Lukáš HORÁK; Xiaowei JIN; Reinhard SCHNEIDER; Tilo BAUMBACH a Václav HOLÝ. Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt. Journal of Materials Science: Materials in Electronics. Basel: MDPI, 2020, roč. 13, č. 1, s. 1-19. ISSN 1996-1944. Dostupné z: https://doi.org/10.3390/ma13010061.

GIANNINI, Cinzia; Václav HOLÝ; Liberato DE CARO; Lorenzo MINO a Carlo LAMBERTI. Watching nanomaterials with X-ray eyes: Probing different length scales by combining scattering with spectroscopy. Progress in Materials Science. Oxford: Elsevier, 2020, roč. 112, JUL 2020, s. 1-70. ISSN 0079-6425. Dostupné z: https://doi.org/10.1016/j.pmatsci.2020.100667.

SMILAUEROVA, J.; P. HARCUBA; M. CIESLAR; M. JANECEKA a Václav HOLÝ. Anomalous X-ray diffraction from omega nanoparticles in beta-Ti(Mo) single crystals. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. CHESTER: INT UNION CRYSTALLOGRAPHY, 2019, roč. 75, SEP, s. 718-729. ISSN 2053-2733. Dostupné z: https://doi.org/10.1107/S2053273319008428.

SMILAUEROVA, J.; P. HARCUBA; M. JANECEK a Václav HOLÝ. Composition of omega-Phase Particles in Ti(Mo) Alloys Studied by Anomalous X-ray Diffraction. CRYSTALS. BASEL: MDPI, 2019, roč. 9, č. 9, s. 1-11. ISSN 2073-4352. Dostupné z: https://doi.org/10.3390/cryst9090440.

JAGEROVA, A.; P. MALINSKY; R. MIKSOVA; P. NEKVINDOVA; J. CAJZL; S. AKHMADALIEV; Václav HOLÝ a A. MACKOVA. Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. MELVILLE: A V S AMER INST PHYSICS, 2019, roč. 37, č. 6, s. 1-11. ISSN 0734-2101. Dostupné z: https://doi.org/10.1116/1.5125320.

KRIEGNER, D.; G. SPRINGHOLZ; C. RICHTER; N. FILET; E. MULLER; M. CAPRON; H. BERGER; Václav HOLÝ; J.H. DIL a J. KREMPASKY. Ferroelectric Self-Poling in GeTe Films and Crystals. CRYSTALS. BASEL: MDPI, 2019, roč. 9, č. 7, s. 1-15. ISSN 2073-4352. Dostupné z: https://doi.org/10.3390/cryst9070335.

CERMAK, P.; P. KNOTEK; P. RULEOVA; Václav HOLÝ; K. PALKA; V. KUCEK; L. BENES; J. NAVRATIL a C. DRASAR. High power factor and mobility of single crystals of Bi2Se3 induced by Mo doping. Journal of Solid State Chemistry. San Diego: Elsevier, 2019, roč. 277, SEP, s. 819-827. ISSN 0022-4596. Dostupné z: https://doi.org/10.1016/j.jssc.2019.07.045.

ZHNAL, P.; P. HARCUBA; M. HAJEK; J. STRASKY; J. SMILAUEROVA; J. VESELY; L. HORAK; M. JANECEK a Václav HOLÝ. In situ detection of stability limit of omega phase in Ti-15Mo alloy during heating. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2019, roč. 52, OCT, s. 1061-1071. ISSN 0021-8898. Dostupné z: https://doi.org/10.1107/S1600576719010537.

CECCHI, S.; D. DRAGONI; D. KRIEGNER; E. TISBI; E. ZALLO; F. ARCIPRETE; Václav HOLÝ; M. BERNASCONI a R. CALARCO. Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys. Advanced Functional Materials. Wrinheim: Wiley-VCH Verlag, 2019, roč. 29, č. 2, s. 1805184-1805193. ISSN 1616-301X. Dostupné z: https://doi.org/10.1002/adfm.201805184.

CERMAK, P.; J. HEJTMANEK; T. PLECHACEK; J. NAVRATIL; J. KASPAROVA; Václav HOLÝ; Z. ZMRHALOVA; M. JAROSOVA; L. BENES a C. DRASAR. Thermoelectric properties and stability of Tl-doped SnS. Journal of Alloys and Compounds. Švýcarsko: Elsevier, 2019, roč. 811, NOV, s. 1-9. ISSN 0925-8388. Dostupné z: https://doi.org/10.1016/j.jallcom.2019.151902.

SRAITROVA, K.; J. CIZEK; Václav HOLÝ; T. PLECHACEK; L. BENES; M. JAROSOVA; V. KUCEK a C. DRASAR. Vacancies in SnSe single crystals in a near-equilibrium state. Physical Review B. College PK: The American Physical Society, 2019, roč. 99, č. 3, s. 1-12. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.99.035306.

HOLÝ, Václav; M. KRYSKO a M. LESZCZYNSKI. Diffuse X-ray scattering from local chemical inhomogeneities in InGaN layers. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2018, roč. 51, č. 4, s. 969-981. ISSN 1600-5767. Dostupné z: https://doi.org/10.1107/S1600576718007173.

SPRINGHOLZ, Günter; S. WIMMER; H. GROISS; M. ALBU; F. HOFER; Ondřej CAHA; D. KRIEGNER; J. STANGL; Günther BAUER a Václav HOLÝ. Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy. PHYSICAL REVIEW MATERIALS. COLLEGE PK: AMER PHYSICAL SOC, 2018, roč. 2, č. 5, s. "054202-1" - "054202-14", 14 s. ISSN 2475-9953. Dostupné z: https://doi.org/10.1103/PhysRevMaterials.2.054202.

CERMAK, P.; P. RULEOVA; Václav HOLÝ; J. PROKLESKA; V. KUCEK; K. PALKA; L. BENES a C. DRASAR. Thermoelectric and magnetic properties of Cr-doped single crystal Bi2Se3 - Search for energy filtering. Journal of Solid State Chemistry. San Diego: Elsevier, 2018, roč. 258, č. 2, s. 768-775. ISSN 0022-4596. Dostupné z: https://doi.org/10.1016/j.jssc.2017.12.009.

DUBROKA, Adam; Ondřej CAHA; Miloš HRONČEK; Pavel FRIŠ; Milan ORLITA; Václav HOLÝ; H. STEINER; Günther BAUER; Günter SPRINGHOLZ a Josef HUMLÍČEK. Interband absorption edge in the topological insulators Bi-2(Te1-xSex)(3). Physical Review B. College PK, MD USA: AMER PHYSICAL SOC, 2017, roč. 96, č. 23, s. "235202-1"-"235202-10", 10 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.96.235202.

SANCHEZ-BARRIGA, J.; A. VARYKHALOV; G. SPRINGHOLZ; H. STEINER; R. KIRCHSCHLAGER; G. BAUER; Ondřej CAHA; E. SCHIERLE; E. WESCHKE; A. A. UENAL; S. VALENCIA; M. DUNST; J. BRAUN; H. EBERT; J. MINAR; E. GOLIAS; L. V. YASHINA; A. NEY; Václav HOLÝ a O. RADER. Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi1-xMnx)(2)Se-3. Nature Communications. London: Nature Publishing Group, 2016, roč. 7, February, s. nestránkováno, 10 s. ISSN 2041-1723. Dostupné z: https://doi.org/10.1038/ncomms10559.

RŮŽIČKA, Jiří; Ondřej CAHA; Václav HOLÝ; Hubert STEINER; Valentyn VOLOBUIEV; Andreas NEY; Günther BAUER; Tomáš DUCHON; Kateřina VELTRUSKÁ; I. KHALAKHAN; Vladimír MATOLÍN; E. SCHWIER; H. IWASAWA; K. SHIMADA a Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. New Journal of Physics. BRISTOL: Institute of Physics, 2015, roč. 17, January, s. "nestránkováno", 11 s. ISSN 1367-2630. Dostupné z: https://doi.org/10.1088/1367-2630/17/1/013028.

CAHA, Ondřej; Adam DUBROKA; Josef HUMLÍČEK; Václav HOLÝ; Hubert STEINER; M. UL-HASSAN; Jaime SANCHEZ-BARRIGA; Oliver RADER; T. N. STANISLAVCHUK; Andrei A. SIRENKO; Günther BAUER a Günter SPRINGHOLZ. Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates. Crystal Growth & Design. Washington: American Chemical Society, 2013, roč. 13, č. 8, s. 3365-3373. ISSN 1528-7483. Dostupné z: https://doi.org/10.1021/cg400048g.

PISKORSKA-HOMMEL, E.; Václav HOLÝ; Ondřej CAHA; A. WOLSKA; A. GUST; C. KRUSE; H. KROENCKE; J. FALTA a D. HOMMEL. Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements. Journal of Alloys and Compounds. LAUSANNE: Elsevier, 2012, roč. 523, May, s. 155-160. ISSN 0925-8388. Dostupné z: https://doi.org/10.1016/j.jallcom.2012.01.133.

PIANO, S.; X. MARTI; A. W. RUSHFORTH; K. W. EDMONDS; R. P. CAMPION; M. WANG; Ondřej CAHA; T. U. SHUELLI; Václav HOLÝ a B. L. GALLAGHER. Surface morphology and magnetic anisotropy in (Ga,Mn)As. Applied Physics Letters. USA: American Institute of Physics, 2011, roč. 98, č. 15, s. "nestránkováno", 3 s. ISSN 0003-6951. Dostupné z: https://doi.org/10.1063/1.3579534.

HOLÝ, Václav; Xavier MARTÍ; Lukáš HORÁK; Ondřej CAHA; Vít NOVÁK; Miroslav CUKR a Tobias Urs SCHÜLLI. Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2010, roč. 97, č. 18, s. 181913-181915. ISSN 0003-6951. Dostupné z: https://doi.org/10.1063/1.3514240.

KRČMÁŘ, Jan; Václav HOLÝ a Ivo VÁVRA. Standing-wave-grazing-incidence x-ray diffraction from polycrystalline multilayers. Applied Physics Letters. USA: American institute of physics, 2009, roč. 94, č. 10, s. "nestránkováno", 3 s. ISSN 0003-6951.

HOLÝ, Václav; T. BAUMBACH; D. LÜBBERT; L. HELFEN; M. ELLYAN; Petr MIKULÍK; S. KELLER; S.P. DENBAARS a J. SPECK. Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis. Physical Review B. USA: The American Physical Society, 2008, roč. 77, č. 1, s. 094102-94110. ISSN 1098-0121.

LÜBBERT, D.; T. BAUMBACH; Václav HOLÝ; Petr MIKULÍK; L. HELFEN; P. PERNOT; M. ELLYAN; S. KELLER; T.M. KATONA; S.P. DENBAARS a J. SPECK. Microdiffraction imaging of dislocation densities in microstructured samples. Europhysics Letters. Paríž: European Physical Society, 2008, roč. 82, č. 5, s. 56002-56006. ISSN 0295-5075.

KRČMÁŘ, Jan; Václav HOLÝ; Lukáš HORÁK; Jaromír SOBOTA a Till H. METZGER. Standing-wave effects in grazing-incidence x-ray diffraction from polycrystalline multilayers. Journal of Applied Physics. USA: American institute of physics, 2008, roč. 103, č. 10, s. 033504-33511. ISSN 0021-8979.

MEDUŇA, Mojmír; Jiří NOVÁK; Günther BAUER; Václav HOLÝ; Claudiu FALUB; Soichiro TSUJINO a Detlev GRÜTZMACHER. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 2007, roč. 22, č. 4, s. 447–453. ISSN 0268-1242.

MEDUŇA, Mojmír; Jiří NOVÁK; Günther BAUER; Václav HOLÝ; Claudiu FALUB; Soichiro TSUJINO a Detlev GRÜTZMACHER. Interdiffusion in SiGe alloys studied by x-rays. Materials Structure in Chemistry, Biology, Physics and Technology. Praha, 2007, roč. 14, č. 2, s. 122-123. ISSN 1211-5894.

HOLÝ, Václav a Stanislav DANIŠ. Diffuse X-ray scattering from GaN/SiC (0001) thin films. Zeitschrift für Kristallographie. 2006, roč. 141-146, č. 1, s. 23-27. ISSN 0044-2968.

MEDUŇA, Mojmír; Jiří NOVÁK; Václav HOLÝ; Günther BAUER; Claudiu FALUB; Soichiro TSUJINO a Detlev GRÜTZMACHER. In-situ investigations of Si and Ge interdiffusion in Si cascade structures. Synchrotron Radiation in Natural Sciences. Warsaw: Polish Synchrotron Radiation Society, 2006, roč. 5, 1-2, s. 76. ISSN 1644-7190.

MEDUŇA, Mojmír; Jiří NOVÁK; Václav HOLÝ; Claudiu FALUB; Günther BAUER a Detlev GRÜTZMACHER. IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES. Materials Structure in Chemistry, Biology, Physics and Technology. Praha, 2006, roč. 13, č. 3, s. 161. ISSN 1211-5894.

MEDUŇA, Mojmír; Jiří NOVÁK; Václav HOLÝ; Günther BAUER; Claudiu FALUB; Soichiro TSUJINO a Detlev GRÜTZMACHER. IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SIGE MULTILAYERS AND CASCADE STRUCTURES. In XTOP 2006 - 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Karlsruhe: Forchungszentrum Karlsruhe, 2006, s. 124.

HOLÝ, Václav; Michael SZTUCKI a Till H. METZGER. Investigation of shape, strain, and interdiffusion in InGaAs quantum rings using grazing incidence x-ray diffraction. J. Appl. Phys. USA: American Institute of Physics, 2006, roč. 99, č. 1, s. 033519-33528. ISSN 0021-8979.

HOLÝ, Václav; Zdeněk MATĚJ a Oliva PACHEROVÁ. Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence. Phys. Rev. B. USA: The American Phys. Society, 2006, roč. 74, č. 3, s. 245205-245214. ISSN 0163-1829.

CAHA, Ondřej; Václav HOLÝ a Kevin BASSLER. Nonlinear Evolution of Surface Morphology in InAs/AlAs Superlattices via Surface Diffusion. Physical Review Letters. USA: The Americal Physical Society, 2006, roč. 96, č. 13, s. 136102-136105. ISSN 0031-9007.

HOLÝ, Václav; Till H. METZGER a Luciana CAPELLO. Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods. Journal of Applied Crystallography. 2006, roč. 39, č. 2, s. 571-581. ISSN 0021-8898.

HOLÝ, Václav; Gunther SPRINGHOLZ a Laurel ABTIN. Surface Exchange and Shape Transitions of PbSe Quantum Dots during Overgrowth. Physical Review Letters. USA: The Americal Physical Society, 2006, roč. 97, č. 12, s. 266103-266106. ISSN 0031-9007.

KLANG, Pavel a Václav HOLÝ. X-ray diffuse scattering from stacking faults in Czochralski silicon. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 2006, roč. 21, č. 3, s. 352-357. ISSN 0268-1242.

HOLÝ, Václav; Tobias SCHUELLI a Rainer T. LECHNER. Anomalous X-ray diffraction from self-assembled PbSe/PbEuTe quantum dots. Journal of Alloys and Compounds. Amsterdam: Elsevier, 2005, roč. 401, 1-2, s. 4-10. ISSN 0925-8388.

DANIŠ, Stanislav a Václav HOLÝ. Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers. Journal of Alloys and Compounds. Amsterdam: Elsevier, 2005, roč. 401, 1-2, s. 217-220. ISSN 0925-8388.

NOVÁK, Jiří; Václav HOLÝ; Julian STANGL; Thomas FROMHERZ; Zhong ZHENYANG; Chen GANG; Günther BAUER a Bernd STRUTH. Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction. Journal of Applied Physics. USA: American institute of physics, 2005, roč. 98, č. 7, s. 073517-73525. ISSN 0021-8979.

DANIŠ, Stanislav; Václav HOLÝ; Dimitrij ZIMIN a Hans ZOGG. Patterson-like analysis of diffuse x-ray scattering from epitaxial mosaic PbTe layers on Si(111). Journal of Applied Physics. USA: American Institute of Physics, 2005, roč. 98, č. 10, s. 103522-103529. ISSN 0021-8979.

CAHA, Ondřej; Petr MIKULÍK; Jiří NOVÁK; Václav HOLÝ; Simon C. MOSS a Andrew NORMAN. Spontaneous lateral modulation in short-period superlattices investigated by grazing-incidence X-ray diffraction. Physical Review B. USA: American Physical Society, 2005, roč. 72, č. 3, s. 035313-35322. ISSN 1098-0121.

FEWSTER, Paul F; Václav HOLÝ a Norman L ANDREW. X-ray diffraction from polycrystalline multilayers in grazing-incidence geometry: Measurement of crystallite size depth distribution. Physical Review B. USA: American Physical Society, 2005, roč. 72, č. 17, s. 174105-174116. ISSN 0163-1829.

KLANG, Pavel; Václav HOLÝ; Josef KUBĚNA; Richard ŠTOUDEK a Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2005, roč. 2005, č. 38, s. A105-A110, 6 s. ISSN 0022-3727.

STANGL, Julian; Václav HOLÝ a Guenther BAUER. X-ray scattering methods for the study of epitaxial self-assembled quantum dots. In Quantum dots: Fundamentals, applications and frontiers. 1. vyd. Dordrecht: Springer, 2005, s. 183-207. NATO Sci. Series II, vol. 190. ISBN 1402033141.

NOVÁK, Jiří; Václav HOLÝ; Julian STANGL; Günther BAUER; Eugen WINTENSBERGER; Suwit KIRAVITTAYA a Oliver G. SCHMIDT. A method for the charcterization of strain fields in burid quantum dots using X-ray standing waves. Journal of physics D: Applied physics. Bristol, England: IOP Publishing Ltd., 2004, roč. 38, 10A, s. A137-A142, 6 s. ISSN 0022-3727.

MEDUŇA, Mojmír; Jiří NOVÁK; Václav HOLÝ; Günther BAUER; Claudiu FALUB; Soichiro TSUJINO; Elisabeth MÜLLER; Detlev GRÜTZMACHER; Yves CAMPIDELLI; Olivier KERMARREC a Daniel BENSAHEL. Annealing studies of high Ge composition Si/SiGe multilayers. Zeitschrift fur Kristalographie. R. Oldenbourg Verlag GmbH, 2004, roč. 219, č. 4, s. 195-200. ISSN 0044-2968.

HOLÝ, Václav; Stanislav DANIŠ; Guenther BAUER a Zhenyang ZHONG. High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers. Applied Physics Letters. 2004, roč. 85, č. 7, s. 3065-3067. ISSN 0003-6951.

HOLÝ, Václav; Ullrich PIETSCH a Tilo BAUMBACH. High-Resolution X-Ray Scattering From Thin Films to Lateral Nanostructures. New York, Berlin, Heidelberg: Springer, 2004, 408 s. Advanced Texts in Physics. ISBN 0387400923.

HOLÝ, Václav. Ordering parameters of self-organized three-dimensional quantum-dot lattices determined from anomalous x-ray diffraction. Appl. Phys. Lett. USA: Institute of Physics, 2004, roč. 84, č. 6, s. 885-887. ISSN 0003-6951.

HOLÝ, Václav. Shape and composition change of Ge dots due to Si capping. Applied Surface Science. USA: ELSEVIER (NORTH-HOLLAND), 2004, roč. 224, č. 2, s. 139-142. ISSN 0169-4332.

HOLÝ, Václav; Julian STANGL a Guenther BAUER. Structural properties of self-organized semiconductor nanostructures. Review of Moder Physics. 2004, roč. 76, č. 4, s. 725-779. ISSN 0036-6861.

CAHA, Ondřej; Vlastimil KŘÁPEK; Václav HOLÝ; S. MOSS; J. LI; A. NORMAN; A. MASCARENHAS; J. RENO; J. STANGL a Mojmír MEDUŇA. X-ray diffraction on laterally modulated (InAs)n/(AlAs)m short-period superlattices. Journal of Applied Physics. USA: American Institute of Physics, 2004, roč. 96, č. 9, s. 4833-4838. ISSN 0021-8979.

KLANG, Pavel; Václav HOLÝ; Richard ŠTOUDEK a Jan ŠIK. X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers. In Proceedings of The Ninth Scientific and Business Conference SILICON 2004. 2004. vyd. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s. 53.

HOLÝ, Václav. 3D hexagonal versus trigonal ordering in self-organized PbSe quantum dot superlattices. Physica E. Amsterdam: Elsevier Science, 2004, roč. 21, č. 11, s. 611-614. ISSN 1386-9477.

HOLÝ, Václav. Composition determination in quantum dots with in-plane scattering compared with STEM and ADX analysis. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2003, roč. 36, č. 10, s. A217-A221, 4 s. ISSN 0022-3727.

HOLÝ, Václav. Dot size dependence of vertical and lateral ordering in selforganized PbSe/PbEuTe quantum-dot superlattices. Appl. Phys. Lett. USA: Institute of Physics, 2003, roč. 82, č. 9, s. 799-801. ISSN 0003-6951.

HOLÝ, Václav. Dynamical diffraction in layered systems - a quest for the final formula. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2003, roč. 36, č. 10, s. A5-A8, 4 s. ISSN 0022-3727.

HOLÝ, Václav. Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2003, roč. 82, č. 11, s. 2251-2253. ISSN 0003-6951.

SOBOTA, J.; Zdeněk BOCHNÍČEK a Václav HOLÝ. Friction and wear properties of C-N/MeNx nanolayer composites. Thin Solid Films. Oxford, UK: Elsevier science, 2003, roč. 94, č. 12, s. 155-159. ISSN 0040-6090.

HOLÝ, Václav. Influence of capping on strain, composition and shape of SiGe islands. Material Sci. and Engn. 2003, roč. 101, č. 10, s. 71-76. ISSN 0255-5476.

HOLÝ, Václav. Influence of capping on strain, composition and shape of SiGe islands. Material Sci. and Engn. 2003, roč. 101, č. 2, s. 71-76. ISSN 0255-5476.

HOLÝ, Václav; Virginie CHAMARD a Till Hartmut METZDER. On the driving forces for the vertical alignment in nitride quantum dot multilayers. Europhysics letters. Paříž: European Physical Society, 2003, roč. 63, č. 5, s. 268-274. ISSN 0295-5075.

KŘÁPEK, Vlastimil; Václav HOLÝ a Josef HUMLÍČEK. Strain field in quantum dots. In WDS'03 Proceedings of Contributed Papers. Praha: MFF UK, 2003, s. 581-586. ISBN 80-86732-18-5.

HOLÝ, Václav. Structural investigation of semiconductor nanostructures by x-ray techniques. Nuclear Instruments & Methods in Physics Research A. 2003, roč. 200, č. 1, s. 11-23. ISSN 0168-9002.

HOLÝ, Václav. Structural study of self-assembled Co nanoparticles. J. Appl. Phys. USA: American Institute of Physics, 2003, roč. 94, č. 2, s. 7743-7748. ISSN 0021-8979.

HOLÝ, Václav. Structural study of self-assembled Co nanoparticles. Journal of Applied Physics. USA: American Institute of Physics, 2003, roč. 94, č. 8, s. 7743-7748. ISSN 0021-8979.

CHUSHKIN, Y.; M. ULMEANU; S. LUBY; E. MAJKOVÁ; I. KOSTIC; Pavel KLANG; Václav HOLÝ; Zdeněk BOCHNÍČEK; M. GIERSIG; M. HILGENDORFF a T. H. METZGER. Structural study of self-assembled Co nanoparticles. Journal of Applied Physics. USA: American Institute of Physics, 2003, roč. 94, č. 12, s. 7743-7748. ISSN 0021-8979.

HOLÝ, Václav. X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires. Nuclear Instruments & Methods in Physics Research A. 2003, roč. 200, č. 4, s. 267-272. ISSN 0168-9002.

HOLÝ, Václav; Mojmír MEDUŇA; Tomáš ROCH a Guenther BAUER. Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 2002, roč. 17, č. 1, s. 480-486. ISSN 0268-1242.

GUNTHER, Springholz; Anneliese RAAB; Rainer LECHNER a Václav HOLÝ. Dot size dependence of vertical and lateral ordering in selforganized PbSe/PbEuTe quantum-dot superlattices. Appl. Phys. Lett. USA: Institute of Physics, 2002, roč. 82, č. 15, s. 799-801. ISSN 0003-6951.

HESSE, Anke; Julian STANGL a Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). Physical Review B. USA: The American Physical Society, 2002, B66, č. 5, s. 085321-085333. ISSN 0163-1829.

HOLÝ, Václav. Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction. Appl. Phys. Lett. USA: Institute of Physics, 2002, roč. 80, č. 3, s. 3521-3523. ISSN 0003-6951.

HOLÝ, Václav a Mojmír MEDUŇA. Investigation of morphology and chemical composition of self-organized semiconductor quantum dots and wires by X-ray scattering. Acta Physica Polonica. 2002, A102, č. 3, s. 7-19. ISSN 0587-4254.

LI, Jianhua; Václav HOLÝ a Mojmír MEDUŇA. Lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period superlattices investigated by high-resolution x-ray scattering. Physical Review B. USA: The American Physical Society, 2002, roč. 66, č. 8, s. 115312-115328. ISSN 0163-1829.

MEDUŇA, Mojmír; Václav HOLÝ a Julian STANGL. Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers. Physica E. Amsterdam: Elsevier Science, 2002, roč. 13, č. 4, s. 1003-1009. ISSN 1386-9477.

HOLÝ, Václav a Guenther BAUER. Processes of self-organization during epitaxial growth of semiconductor superlattices - an x-ray scattering study. In STANGL, Julian a Gunther SPRINGHOLZ. From Semiconductors to Proteins: Beyond the Averaged Structure. New York: Kluwer Academic, 2002, s. 67-83. Science. ISBN 0306472392.

SPRINGHOLZ, Gunther a Václav HOLÝ. Self-organized ordering in self-assembled quantum dot superlattices. Material Sci. and Engn. 2002, B88, č. 10, s. 143-157. ISSN 0255-5476.

STANGL, Julian a Václav HOLÝ. Self-organized semiconductor nanostructures: shape, strain and composition. Materials Science and Engineering. 2002, C19, č. 3, s. 349-358. ISSN 0921-5093.

ROCH, Tomáš a Václav HOLÝ. Strain in buried self-assembled SiGe wires studied by grazing-incidence x-ray diffraction. Physical Review B. USA: American Physical Society, 2002, B65, č. 11, s. 245324-234336, 12 s. ISSN 0163-1829.

STANGL, Julian; Anke HESSE; Tomáš ROCH a Václav HOLÝ. Structural investigation of semiconductor nanostructures by x-ray techniques. Nuclear Instruments & Methods in Physics Research A. 2002, roč. 200, č. 1, s. 11-23. ISSN 0168-9002.

SOBOTA, Jaroslav; Zdeněk BOCHNÍČEK; Václav HOLÝ; G. SORENSEN a H. JENSEN. C-N/MeN nanocomposite coatings, deposition and testing of performance. Surface and coating technology. New York: ELSEVIER, 2001, roč. 142, č. 142, s. 590-595. ISSN 0257-8972.

ANOPCHENKO, A.; M. JERGEL; E. MAJKOVA a V. HOLY. Effect of substrate heating and ion beam polishing on the interface quality in Mo/Si multilayers - X-ray comparative study. Physica B. Amsterdam: Elsevier Science, 2001, roč. 305, č. 1, s. 14-20. ISSN 0921-4526/00.

DANIEL, A.; Václav HOLÝ a G. BAUER. GID study of strains in Si due to patterned SiO2. J. Phys.D.: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, roč. 34, 10A, s. 197-202. ISSN 0022-3727.

DANIEL, A.;; Václav HOLÝ; Y. ZHUANG; T. ROCH; J. GRENZER; Zdeněk BOCHNÍČEK a G. BAUER. GID study of strains in Si due to patterned SiO2. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, roč. 34, 10A, s. A197, 6 s. ISSN 0022-3727.

HOLY, V.; T. ROCH; J. STANGL a G. BAUER. Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires. Phys. Rev. B. USA: The American Phys. Society, 2001, roč. 63, č. 20, s. 5318-5327. ISSN 0163-1829.

HOLY, V.; J. STANGL; G. SPRINGHOLZ a G. BAUER. High-resolution x-ray diffraction from self-organized PbSe/PbEuTe quantum dot superlattices. J. Phys.D.: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, roč. 34, 10A, s. 1-5. ISSN 0022-3727.

SOBOTA, Jaroslav; G. SORENSEN; H. JENSEN; Zdeněk BOCHNÍČEK a Václav HOLÝ. Nanocomposite Coatings Used as Hard Solid Lubricants. In Proceedings of the International Conference on Metalurgical Coatings and Thin Films. San Diego, California: MRS, 2001, s. 1.

STANGL, J.; A. DANIEL a V. HOLY. Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2001, roč. 79, č. 10, s. 1474-1476. ISSN 0003-6951.

ROCH, T. a V. HOLY. Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle x-ray scattering. physica status solidi (b). Berlin: J. Wiley, 2001, roč. 224, č. 1, s. 241-245. ISSN 0370-1972.

ROCH, T.; Václav HOLÝ a J. STANGL. Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering. physica status solidi (b). Berlin: J. Wiley, 2001, roč. 224, č. 1, s. 241-245. ISSN 0370-1972.

KANG, H.H.; G. SPRINGHOLZ; V. HOLY a G. BAUER. TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature. Materials Science and Engineering. Lausanne: ELSEVIER SCIENCE SA, 2001, roč. 80, 1-3, s. 104-108. ISSN 0921-5107.

SPRINGHOLZ, G.; M. PINCZOLITS; Václav HOLÝ; S. ZERLAUTH; I. VAVRA a G. BAUER. Vertical and lateral ordering in self-organized quantum dot superlattices. Physica E. Amsterdam: Elsevier Science, 2001, roč. 2001, č. 9, s. 149-162. ISSN 1386-9477.

LI, J.H.; Václav HOLÝ; Z. ZHONG; J. KULIK; S.C. MOSS; A.G. NORMAN; A. MASCARENHAS; J.L. RENO a D.M. FOLLSTAEDT. X-ray analysis of spontaneous lateral modulation in InAs/AlAs short-period superlattices. Appl. Phys. Lett. USA: Institute of Physics, 2001, roč. 2001, č. 78, s. 219-220. ISSN 0003-6951.

LI, J. H.; J. KULIK a V. HOLY. X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films. Phys. Rev. B. USA: The American Phys. Society, 2001, roč. 63, č. 15, s. 5310-5316. ISSN 0163-1829.

MEDUŇA, Mojmír; V. HOLY; T. ROCH a G. BAUER. X-ray reflectivity from self-assembled structures in Ge/Si superlattices. J. Phys.D.: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, roč. 34, 10A, s. 193-196. ISSN 0022-3727.

MEDUŇA, Mojmír; Václav HOLÝ a T. ROCH. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy. Journal of Applied Physics. USA: American institute of physics, 2001, roč. 89, č. 9, s. 4836-4842. ISSN 0021-8979.

ROCH, T.; V. HOLY; Mojmír MEDUŇA a G. BAUER. X-ray studies on self-organized wires in SiGe/Si multilayers. J. Phys.D.: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, roč. 34, 10A, s. A6-A10, 5 s. ISSN 0022-3727.

ZHONG, Z.; V. HOLY a J.H. LI. X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy. Journal of Applied Physics. USA: American institute of physics, 2001, roč. 90, č. 2, s. 644-649. ISSN 0021-8979.

JERGEL, M.; Václav HOLÝ; E. MAJKOVÁ; Š. LUBY; R. SENDERÁK; H.J.. STOCK; D. MENKE; U. KLEINEBERG a U. HEINZMANN. Effect of ion-beam polishing on the interface quality in a Ti/C multilayer mirror for "water window". European Powder Diffraction. Velká Britanie: Elsevier, 2000, roč. 321-3, 1,2, s. 184-188.

STANGL, J.; Václav HOLÝ; T. ROCH; A. DANIEL; G. BAUER; J. ZHU; K. BRUNNER a G. ABSTREITER. Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si supertattice. Physical Review B. USA: American Physical Society, 2000, roč. 2000, č. 62, s. 7229-7236. ISSN 0163-1829.

ZHUANG, Y.; U. PIETSCH; J. STANGL; Václav HOLÝ; N. DAROWSKI; J. GRENZER; S. ZERLAUTH; F. SCHÄFFLER a G. BAUER. In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction. Physica B. Amsterdam: Elsevier Science, 2000, roč. 2000, č. 283, s. 130-133. ISSN 0921-4526.

JERGEL, M.; A. ANOPCHENKO; Václav HOLÝ; V. MAJKOVA; S. LUBY a R. SENDERAK. Interface study of a Co/Si/W/Si multilayers with enhanced thermal stability. J. Appl. Crystallography. Velká Britanie: Int. Union of Crystallography, 2000, roč. 2000, č. 33, s. 753-756. ISSN 0021-8898.

HOLÝ, Václav; J. STANGL; G. SPRINGHOLZ; M. PINCZOLITS; G. BAUER; I. KEGEL a T.H. METZGER. Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction. Physica B. Amsterdam: Elsevier Science, 2000, roč. 2000, č. 283, s. 65-68. ISSN 0921-4526/00.

SPRINGHOLZ, G.; J. STANGL; M. PINCZOLITS; Václav HOLÝ; Petr MIKULÍK; P. MAYER; K. WIESAUER; G. BAUER; D. SMILGIES; H.H. KANG a L. SALAMANCA-RIBA. Nearly perfect 3D ordering in IV-VI quantum dot superlattices with ABCABC... vertical stacking sequence. Physica E. Amsterdam, 2000, roč. 2000, č. 7, s. 870-875. ISSN 1386-9477.

MEDUŇA, Mojmír; Václav HOLÝ; Josef KUBĚNA; Julian STANGL; Gunter BAUER; Jian-hong ZHU a Karl BRUNNER. RTG reflexe laterálních struktur SiGe. In 13. konference slovenských a českých fyzikov. Zvolen: Slovenská fyzikálna spoločnosť, 2000, s. 237-239. ISBN 80-228-0876-8.

SPRINGHOLZ, G.; M. PINCZOLITS; Václav HOLÝ; P. MAYER; K. WIESAUER; T. ROCH a G. BAUER. Self-organized growth of three-dimensional IV-VI semiconductor quantum-dot crystals with fcc-like vertical stacking and tunable lattice constant. Surface science. Amsterdam: Elsevier Science B, 2000, roč. 2000, 454-456, s. 657-670. ISSN 0039-6028/00.

STANGL, J.; T. ROCH; Václav HOLÝ; M. PINCZOLITS; G. SPRINGHOLZ; G. BAUER; I. KEGEL; TH. METZGER; J. ZHU; K. BRUNNER; G. ABSTREITER a D. SMILGIES. Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices. J. Vac. Sci. Technol. B. USA: American Vacuum Socicety, 2000, roč. 2000, č. 18, s. 2187-2191. ISSN 0734-211X.

JERGEL, M.; A. ANOPCHENKO; E. MAJKOVA; M. SPASOVA; S. LUBY; Václav HOLÝ; M. BRUNEL; A. LUCHES a M. MARTINO. Structure of Ag/Co multilayers on excimer laser irradiation. Thin Solid Films. Oxford, UK: Elsevier science, 2000, roč. 2000, č. 373, s. 216-220. ISSN 0040-6090.

SOBOTA, J.; G. SORENSEN; H. JENSEN; Josef KUBĚNA a Václav HOLÝ. Temperature stability of C-N/NbN nanocomposite multilayers. Diamond and Related Materials. USA: Elsevier, 2000, roč. 2000, č. 9, s. 587-591. ISSN 0925-9635/00.

SPRINGHOLZ, G.; M. PINCZOLITS; P. MAYER; Václav HOLÝ; G. BAUER; H.H. KANG a L. SALAMANCA-RIBA. Tuning of Vertical and Lateral Correlations in Self-Organized Quantum Dot Superlattices. Physical Review Letters. USA: The Americal Physical Society, 2000, roč. 2000(84), č. 20, s. 4669-4672. ISSN 0031-9007.

RUBINI, S.; B. BONANNI; E. PELUCCHI; A. FRANCIOSI; A. GARULLI; A. PARISINI a Václav HOLÝ. ZnSe/CdTe/ZnSe heterostructures. J. Vac. Sci. Technol. B. USA: American Vacuum Socicety, 2000, roč. 2000(18), č. 4, s. 2263-2270. ISSN 0734-211X.

HOLÝ, Václav. Diffuse x-ray reflection from multilayers with rough interfaces. Journal of Materials Science: Materials in Electronics. Great Britain: Kluwer Academic Publishers, 1999, (10)1999, -, s. 223-226. ISSN 0957-4522.

GRIM, Jan; Václav HOLÝ; Josef KUBĚNA; J. STANGL; A.A. DARHUBER; S. ZERLAUTH; F. SCHÄFFLER a G. BAUER. Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 1999, roč. 32(1999), -, s. A216, 4 s. ISSN 0268-1242.

STANGL, J.; Václav HOLÝ; A.A. DARHUBER; Petr MIKULÍK; G. BAUER; J. ZHU; K. BRUNNER a G. ABSTREITER. High-resolution x-ray diffraction on self-organized step bunches of Si_1-xGe_x grown on (113)-oriented Si. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing LTd, 1999, roč. 32, č. 9999, s. A71, 4 s. ISSN 0022-3727.

HOLÝ, Václav; U. PIETSCH a T. BAUMBACH. High-resolution x-ray scattering from thin films and multilayers. Berlin, Heidelberg, New York: Springer-Verlag, 1999, 256 s. Springer Tracts in Modern Physics. ISBN 3-540-62029-X.

HOLÝ, Václav; U. PIETSCH a T. BAUMBACH. High-Resolution X-Ray Scattering From Thin Films and Multilayers. Berlin, Heidelberg, New York: Springer Tracts in Modern Physics, 1999, 256 s. Springer-Verlag.

HOLÝ, Václav; J. STANGL; S. ZERLAUTH; G. BAUER; N. DAROWSKI; D. LÜBBERT a U. PETSCH. Lateral arrangement of self-assembled quantum dots in an SiGe/Si supertattice. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 1999, roč. 32(1999), -, s. A234, 5 s. ISSN 0268-1242.

STANGL, J.; Václav HOLÝ; Petr MIKULÍK; G. BAUER; I. KEGEL; T.H. METZGER; O.G. SCHMIDT; C. LANGE a K. EBERL. Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering. Applied Physics Letters. USA: American Institute of Physics, 1999, roč. 74, -, s. 3785-3787. ISSN 0003-6951.

BAUER, G.; A.A. DARHUBER a Václav HOLÝ. Self-assembled Germanium-dot multilayers embedded in Silicon. Cryst. Res. Technol. Linz: IFH, 1999, roč. 34(1999), č. 2, s. 197-209.

HOLÝ, Václav; G. SPRINGHOLZ; M. PINCZOLITS a G. BAUER. Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices. Physical Review Letters. USA: The Americal Physical Society, 1999, roč. 83(1999), č. 2, s. 356-359. ISSN 0031-9007.

ZHUANG, Y.; Václav HOLÝ; J. STANGL; A.A. DARHUBER; Petr MIKULÍK; S. ZERLAUTH; F. SCHÄFFLER; G. BAUER; N. DAROWSKI; D. LÜBBERT a U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 1999, roč. 32, č. 9999, s. A224, 6 s. ISSN 0022-3727.

BOCHNÍČEK, Zdeněk; Ivo VÁVRA a Václav HOLÝ. Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection. Bulletin Krystalografické společnosti Materials Structure. 1999, roč. 6, č. 1, s. 57. ISSN 1211-5895.

ZHUANG, Y.; J. STANGL; A.A. DARHUBER; G. BAUER; Petr MIKULÍK; Václav HOLÝ; N, DAROWSKI a U. PIETSCH. X-ray diffraction from quantum wires and quantum dots. Journal of Materials Science: Materials in Electronics. Great Britain: Kluwer Academic Publishers, 1999, (10)1999, -, s. 215-221. ISSN 0957-4522.

GRIM, Jan; Václav HOLÝ; Josef KUBĚNA; A.A. DARHUBER; S. ZERLAUTH a G. BAUER. X-ray reflection from self-organized interfaces in an SiGe/Si multilayer. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 1999, roč. 14(1999), -, s. 32-40. ISSN 0268-1242.

HOLÝ, Václav; A.A. DARHUBER; J. STANGL; S. ZERLAUTH; F. SCHAFFER; G. BAUER; N. DAROWSKI; D. LUBBERT a U. PIETSCH. Coplanar and grazing incidence x-ray diffraction investigation of self-organized SiGe quantum dot multilayers. Physical Review B. USA: The American Physical Society, 1998, (58)1998, č. 12, s. 7934-7943. ISSN 0163-1829.

DARHUBER, A.A.; Václav HOLÝ; J. STANGL; Petr MIKULÍK; K. BRUNNER; G. ABSTREITER a G. BAUER. Highly regular self-organization of step bunches during growth of SiGe on Si(113). Appl. Phys. Lett. USA: Institute of Physics, 1998, roč. 73(1998), -, s. 1535-1537. ISSN 0003-6951.

STANGL, J.; A.A. DARHUBER; Václav HOLÝ; M. DE NAUROIS; S. FERREIRA; W. FASCHINGER a G. BAUER. High-resolutin x-ray diffraction and x-ray reflectivity studies of short-period CdTe/MnTe-superlattices. Journal of crystal growth. Amsterdam: Elsevier Science, 1998, roč. 1998, 184/185, s. 105-108. ISSN 0022-0248.

HOLÝ, Václav; U. PIETSCH a T. BAUMBACH. High-resolution x-ray scattering from thin films and multilayers. Germany Berlin: High-resolution x-ray scattering from thin films and multilayers, 1998, 256 s. Springer Tracts in Modern Physics. ISBN 3-540-62029-X.

JERGEL, M.; E. MAJKOVÁ; S. LUBY; R. SENDERÁK a Václav HOLÝ. Characterization of surfaces and interfaces by hard x-ray reflectometry and diffuse scattering at grazing incidence. Acta Physica Slovaca. Slovakia, 1998, roč. 1998, č. 48, s. 427-440. ISSN 0323-0465.

HOLÝ, Václav; A.A. DARHUBER; J. STANGL; G. BAUER; J. NUETZEL a G. ABSTREITER. Oblique roughness replication in strained SiGe/Si multilayers. Physical Review B. USA: The American Physical Society, 1998, (57)1998, č. 19, s. 12435-12442. ISSN 0163-1829.

SPRINGHOLZ, G.; Václav HOLÝ; M. PINCZOLITS a G. BAUER. Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant. Physical Review Letters. USA: The Americal Physical Society, 1998, roč. 282(1998), č. 23, s. 734-737. ISSN 0031-9007.

LI, J.H.; G. SPRINGHOLZ; G. STANGL; H. SEYRINGER; Václav HOLÝ; F. SCHAFFLER a G. BAUER. Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers. J. Vac. Sci & Technol. 1998, roč. 1998, B16, s. 1610-1615.

DARHUBER, A.A.; Václav HOLÝ; P. SCHITTENHELM; J. STANGL; I. KEGEL; Z. KOVATS; T.H. METZGER; G. BAUER; G. ABSTREITER a G. GRUEBEL. Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods. Physica E 2. Amsterdam, 1998, roč. 1998, -, s. 789-793. ISSN 1386-9477.

HOLÝ, Václav; A.A. DARHUBER; J. STANGL; G. BAUER; J. NUTZEL a G. ABSTREITER. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. Semicond. Sci. Technol. UK: Publishing Ltd, 1998, roč. 13(1998), -, s. 590-598. ISSN 0268-1242.

JERGEL, M.; Václav HOLÝ; E. MAJKOVÁ; S. LUBY; R. SENDERÁK; H.J. STOCK; D. MENKE; U. KLEINEBERG a U. HEINZMANN. X-ray scattering study of interface roughness correlation in Mo/Si and Ti/C multilayers for X-UV optics. Physica B condensed matter. Amsterdam: Elsevier Science, 1998, roč. 253(1998), -, s. 28-39. ISSN 0921-4526.

HOLÝ, Václav. Diffuse X-ray reflection from multilayers with stepped interfaces. Physical Review B. USA: The American Physical Society, 1997, (55)1997, č. 15, s. 9960-10027. ISSN 0163-1829.

HOLÝ, Václav. Diffuse x-ray scattering from epitaxial thin layers. Surface Investigation. 1997, roč. 1997, č. 12, s. 329-344.

KUBĚNA, Josef a Václav HOLÝ. Göbelovo parabolické zrcadlo - naše zkušenosti. (Goebel mirror - our opinniens). Materials Structure. Krystalografická společnost, 1997, (4)1997, č. 3, s. 91-97. ISSN 1211-5894.

DARHUBER, A.A. a Václav HOLÝ. High resolution X-ray diffraction and reflectivity studies f vertical and lateral ordering in multiple self-organized InGaAs quantum dots. Jpn.J.Appl.Phys. 1997, roč. 36(1997), 6B, s. 4084-4087.

DARHUBER, A.A. a Václav HOLÝ. High-resolution X-ray diffraction from multilayered self-assembled Ge dots. Physical Review B. USA: The American Physical Society, 1997, (55)1997, č. 23, s. 15652-15714. ISSN 0163-1829.

JERGEL, M. a Václav HOLÝ. Interface study of W/Si multilayers with increasing number of periods. II Nuovo Cimento. 1997, roč. 1997, 19 D, s. 439-445.

DARHUBER, A.A. a Václav HOLÝ. Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution X-ray diffraction. Appl.Phys. Lett. 1997, (70)1997, č. 8, s. 955-957.

ZERLAUTH, S. a Václav HOLÝ. MBE Growth and Structural Characterization of SiC/SiGe Superlattices. J. Cryst. Growth. 1997, roč. 1997, č. 175, s. 459-464.

STANGL, J. a Václav HOLÝ. Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices. Journal of crystal growth. Amsterdam: Elsevier Science, 1997, (19)1997, 2-4, s. 355-360. ISSN 0022-0248.

VÁVRA, I.; Václav HOLÝ a Josef KUBĚNA. Stacked Josephson junction based on Nb/Si superlattice. Low Temperature Physics. 1997, roč. 1997, č. 106, s. 373-379.

LI, J.H. a Václav HOLÝ. Strain relaxation in high electron mobility Si 1-x Ge x/Si structures. J. Appl. Phys. 1997, (82)1997, č. 15, s. 2881-2966. ISSN 0021-8979.

DARHUBER, A.A.; J. STANGL; Václav HOLÝ; G. BAUER; A. KROST; M. GRUNDMANN; D. BIMBERG; V.M. USTINOV; P.S. KOP'EV; A.O. KOSOGOV a P. WERNER. Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques. Thin Solid Films. UK Oxford: Elsevier science, 1997, roč. 1997, č. 303, s. 198-204. ISSN 0040-6090.

HOLÝ, Václav. X-ray reflectivity reciprocal space mapping of strained SiG /Si superlattices. II Nuovo Cimento. 1997, roč. 1997, 19 D, s. 419-428.

HOLÝ, Václav. Elastic strains in GaAs/AlAs quantum dots studied by high resolution. X-ray diffraction. Solid - State Electronics. 1996, roč. 40(1996), 1-8, s. 373-377.

BAUER, G.; Václav HOLÝ a J. LI. High Resolution X-Ray Reciprocal Space Mapping. Acta Physica Polonica A. 1996, roč. 1996, č. 89, s. 115-127.

JERGEL, Matej; Václav HOLÝ; Zdeněk BOCHNÍČEK; Eva MAJKOVÁ a Štefan LUBY. Interface evolution after thermal treatment of Tungsten/ Silicon multilayers. Acta Crystallographica A, Suppl. 1996, roč. 52, -, s. 1-467. ISSN 0108-7673.

JERGEL, M. a Václav HOLÝ. Interface roughness correlation in tungsten/silicon multilayers. J. Mag. Materials. 1996, roč. 1996, č. 156, s. 117-118.

SPRINGHOLZ, G.; G. BAUER a Václav HOLÝ. Local Surface Deformations Induced by Interfacial Misfit Dislocations in Lattice-mismatched heteroepitaxy of EuTe on PbTe(111). Surface Science. 1996, roč. 365(1996), -, s. 453-460.

HOLÝ, Václav. Many crystal x-ray diffractometry on superlattices. Heterostructure Epitaxy and Devices. NATO ASI Series 3. Kluwer Acad. Publl. Dordrecht (D4). 1996, roč. 1996, č. 11, s. 183-192.

DARHUBER, A. a Václav HOLÝ. Quantitative analysis of elastic strains in GaAs/AlAs quantum dots. Physica B. 1996, roč. 1996, č. 227, s. 11-16.

CHLÁDEK, M. a Václav HOLÝ. Quantitative Study of Interface Roughness Replication in Multilayers Using X-ray Reflectivity and Transmission Electron Microscopy. Appl. Phys. Lett. USA: Institute of Physics, 1996, roč. 69(19960, č. 9, s. 1318-1320. ISSN 0003-6951.

SPRINGHOLZ, G.; G. BAUER a Václav HOLÝ. Scanning-tunneling-microscopy Observation of Stress-driven Surface Diffusion Due to Localized Strain Fields of Misfit Dislocations in Heteroepitaxy. Physical Review B. USA: The American Physical Society, 1996, roč. 54(1996), -, s. 4500-4503. ISSN 0163-1829.

BAUER, G.; A. DARHUBER a Václav HOLÝ. Structural characterization of reactive ion-etched semicond uctor nanostructures using x-ray reciprocal space mapping. Mat. Res. Soc. Symp. Proc. 1996, roč. 1996, č. 405, s. 359-371.

HOLÝ, Václav a Petr MIKULÍK. Theoretical description of multiple crystal arrangements. In X-ray and neutron dynamical diffraction: theory and applications. New York: Plenum Press, 1996, s. 259-268. ISBN 0-306-45501-3.

VÁVRA, I.; Václav HOLÝ; Josef KUBĚNA a Zdeněk BOCHNÍČEK. Thermal Stability of SIS Tunnel Junction with Silicon Barrier. Czechoslovak Journal of Physic, Suppl. S2. 1996, roč. 46(1996), S2, s. 675-676.

STOEMMER, R. a Václav HOLÝ. X-ray and neutron diffuse scattering from multilayers of fatty acid salt molecules. Physica B. 1996, roč. 1996, č. 221, s. 284-288.

JERGEL, M. a Václav HOLÝ. X-ray reflectivity and diffuse scattering study of thermally treated XSi/Si multilayers. Mater. Sci. Forum. 1996, roč. 1996, 228-231, s. 505-510.

JERGEL, Matej; Václav HOLÝ a Zdeněk BOCHNÍČEK. X-ray studies of surfaces and interfaces. Bulletin Krystalografické společnosti Materials Structure. 1996, roč. 3, č. 3, s. 261. ISSN 1211-5895.

DARHUBER, A.A. a Václav HOLÝ. Crystalline and Quasi-cristalline Patterns in X-Ray Diffraction from Periodic Arrays of Quantum Dots. Europhysics Letters. 1995, roč. 32(1995), č. 2, s. 131-136. ISSN 0295-5075.

KOPPENSTEINER, E. a Václav HOLÝ. Determination of threading dislocation density in hetero-epitaxial layers by diffuse x-ray scattering. J. Phys. D: Appl. Phys. 1995, roč. 28, -, s. 334-340. ISSN 0022-3727.

HOLÝ, Václav. Diffuse x-ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content. J. Appl. Phys. 1995, roč. 78(1995), č. 8, s. 5013-5033. ISSN 0021-8979.

HOLÝ, Václav a Josef KUBĚNA. Effect of interfacial-roughness replication on the diffuse x-ray reflection from periodical multilayers. Appl. Phys. A. 1995, roč. 1995, č. 60, s. 93-96.

HOLÝ, Václav. Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction. Physical Review B. USA: The American Physical Society, 1995, roč. 52(1995), č. 11, s. 8348-8404. ISSN 0163-1829.

BAUMBACH, G.T. a Václav v HOLÝ. Grazing-incidence diffraction from multilayers. Physical Review B. USA: The American Physical Society, 1995, roč. 51(1995), č. 23, s. 16848-16906. ISSN 0163-1829.

BOCHNÍČEK, Zdeněk; Václav HOLÝ; G. WOLF; H. STANZL a J. GEBHARDT. High Resolution x-ray diffractometry of ZnTe layers at elevated temperatures. Journal of Applied Physics. 1995, roč. 78, č. 2, s. 862-867. ISSN 0021-8979.

HOLÝ, Václav. Interface roughness in surface-sensitive x-ray methods. J. Phys. D: Appl. Phys. 1995, roč. 28, -, s. 253-257. ISSN 0022-3727.

JERGEL, M. a Václav HOLÝ. Interface study of W-Si/Si and obliquely deposided W/Si multilayers by grazing-incidence high-resolution x-ray diffraction. J. Phys. D: Appl. Phys. 1995, roč. 28, -, s. 258-262. ISSN 0022-3727.

LI, J.H. a Václav HOLÝ. Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping. Semicond. Sci. Technol. UK: Publishing Ltd, 1995, roč. 10, -, s. 1621-1628. ISSN 0268-1242.

HANDLÍŘOVÁ, Blanka; Václav HOLÝ; Josef HUMLÍČEK; Jana MUSILOVÁ; Petr PÁNEK a František VIŽĎA. Konzultační cvičení II. Brno: Masarykova univerzita v Brně, 1995, 86 s. ISBN 80-210-1289-7.

LI, J.H. a Václav HOLÝ. Strain relaxation and misfit dislocations in compositionally graded Si 1-x Ge x layers on Si (001). Journal of Crystal Growth. 1995, roč. 1995, č. 157, s. 137-141.

MIKULÍK, Petr; Václav HOLÝ a Josef KUBĚNA. X-ray diffraction on Fibonacci superlattices. Acta Crystallographica A. 1995, roč. 51, č. 9999, s. 825-830.

KOPPENSTEINER, E. a Václav HOLÝ. Analysis of strain and mosaicity in a short-period Si 9 Ge 6 superlattice by x-ray diffraction. Appl. Phys. Lett. USA: Institute of Physics, 1994, roč. 64, č. 2, s. 172-174. ISSN 0003-6951.

HOLÝ, Václav. Diffuse x-ray scattering from non-ideal periodical crystalline multilayers. Appl. Phys. A. 1994, roč. 58(1994), -, s. 173-180.

KOPPENSTEINER, E. a Václav HOLÝ. Diffuse x-ray scattering from p+ porous silicon by triple axis diffractometry. Appl. Phys. Lett. USA: Institute of Physics, 1994, roč. 65, č. 12, s. 1504-1506. ISSN 0003-6951.

HOLÝ, Václav a Josef KUBĚNA. Effect of interfacial-roughness replication on the diffuse x-ray reflection from periodical multilayers. Appl. Phys. A. 1994, roč. 60, -, s. 93-96.

KOPPENSTEINER, E. a Václav HOLÝ. High resolution x-ray triple axis diffractometry of short period Si m Ge n superlattices. Jpn. J. Appl. Phys. 1994, roč. 33, 4B, s. 2322-2328.

HOLÝ, Václav. Nonspecular x-ray reflection from rough multilayers. Physical Review B. USA: The American Physical Society, 1994, roč. 49, č. 15, s. 10668-10743. ISSN 0163-1829.

KOPPENSTEINER, E. a Václav HOLÝ. Quantitative analysis of strain relaxation and mosaicity in short period Si m Ge n superlattices using reciprocal space mapping by x-ray diffraction. Solid-State Electronics. 1994, roč. 37, 4-6, s. 629-634.

LÍBEZNÝ, Milan; M. CAYMAX; Antonín BRABLEC; Josef KUBĚNA a Václav HOLÝ. Spektrální elipsometrická charakterizace tenkých epitaxních vrstev Si_(1-x)Ge_x. In 1st Int. Conf. on Materials for Microelectronics. Barcelona: University of Barcelona, 1994, s. 23-27.

LANG, M. a Václav HOLÝ. Structural properties of perfect ZnTe epilayers on (001) GaAs substrates. Journal of Crystal Growth. 1994, roč. 138, -, s. 81-85.

BAUMBACH, G.T. a Václav HOLÝ. The influence of specular interface reflection on grazing incidence x-ray diffraction and diffuse scattering from superlattices. Physica B. 1994, roč. 198, -, s. 249-252.

VÁVRA, I.; Václav HOLÝ a Josef KUBĚNA. The influence of thermal processing on structural and electrical properties of Wx Si 1-x/Si multilayers. Nuclear Instruments & Methods in Physics Research A. 1994, roč. 350, -, s. 379-390. ISSN 0168-9002.

PLOTZ, W. a Václav HOLÝ. X-ray characterization of semiconductor surfaces and interfaces. J. Phys. III France 4. 1994, roč. 1994, -, s. 1565-1571.

HOLÝ, Václav. X-ray triple-cristal diffractometry of defects in epitaxic layers. J. Appl. Cryst. 1994, roč. 27, -, s. 551-557.

BOCHNÍČEK, Zdeněk; Václav HOLÝ a Josef KUBĚNA. Denuded zone depth studied by x-ray diffraction. 3rd scientific and busines conference SILICON 92. 1993, roč. 1992, č. 1, s. 44-45.

HOLÝ, Václav; Josef KUBĚNA a Ivan OHLÍDAL. The diffuse x-ray scattering in real periodical superlatices. Superlattices and Microstructures. 1993, roč. 12, č. 1, s. 25-35. ISSN 0749-6036.

HOLÝ, Václav. Triple crystal x-ray diffractometry of periodic arrays of semiconductor quantum wires. Appl. Phys. Lett. USA: Institute of Physics, 1993, roč. 63, č. 23, s. 3140-3142. ISSN 0003-6951.

LÍBEZNÝ, Milan; Václav HOLÝ a Josef KUBĚNA. X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers. Thin Solid Films. UK Oxford: Elsevier science, 1993, roč. 1993, č. 2, s. 158-161. ISSN 0040-6090.

HOLÝ, Václav a Josef KUBĚNA. X-ray diffractometry of small defects in layered systems. J. Phys. D: Appl. Phys. 1993, roč. 26, -, s. 1267-1271. ISSN 0022-3727.

HOLÝ, Václav a Josef KUBĚNA. X-ray double and triple crystal diffractometry of mosaic structure in heteroepitaxial layers. J. Appl. Phys. 1993, roč. 74, č. 3, s. 1736-1743. ISSN 0021-8979.

HOLÝ, Václav a Josef KUBĚNA. X-ray double and triple crystal diffractometry of silicon crystals with small defects. Phys. Stat. Sol. (b). 1993, roč. 1992, -, s. 9.

HOLÝ, Václav; Josef KUBĚNA a Ivan OHLÍDAL. X-ray reflection from rough layered systems. Phys. Rev. B. 1993, roč. 47, č. 23, s. 15896-16798. ISSN 0163-1829.