Výpis publikací

PODHORSKÝ, Martin; Maximilian KLONZ; Lux BÖHMER; Sebastian KULIG; Chirag C. PALEKAR; Petr KLENOVSKÝ; Sven RODT a Stephan REITZENSTEIN. Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics. ACS Photonics. AMER CHEMICAL SOC, 2026, roč. 13, č. 2, s. 471-481. ISSN 2330-4022. Dostupné z: https://doi.org/10.1021/acsphotonics.5c02303.

KLENOVSKÝ, Petr. Coulomb correlated multiparticle states of weakly confining GaAs quantum dots. PHYSICAL REVIEW B. AMER PHYSICAL SOC, 2026, roč. 113, č. 12, s. "125410-1"-"125410-13", 13 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/wjw9-blb1.

GAUR, Kartik; Priyabrata MUDI; Petr KLENOVSKÝ a Stephan REITZENSTEIN. Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots. Materials for Quantum Technology. IOP Publishing Ltd, 2025, roč. 5, č. 2, s. 1-25. ISSN 2633-4356. Dostupné z: https://doi.org/10.1088/2633-4356/add3ad.

VALDHANS, Jakub a Petr KLENOVSKÝ. Combined tight-binding and configuration interaction study of unfolded electronic structure of the 𝐺 color center in Si. Physical Review B. American Physical Society, 2025, roč. 112, č. 16, s. 165413-165425. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/8d5x-779h.

LIMAME, Imad; Ching-Wen SHIH; Alexej KOLTCHANOV; Fabian HEISINGER; Felix NIPPERT; Moritz PLATTNER; Johannes SCHALL; Markus R. WAGNER; Sven RODT; Petr KLENOVSKÝ a Stephan REITZENSTEIN. Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method. Applied Physics Letters. AIP Publishing, 2024, roč. 124, č. 6, s. 1-6. ISSN 0003-6951. Dostupné z: https://doi.org/10.1063/5.0187074.

SHIH, Ching-Wen; Imad LIMAME; Chirag C. PALEKAR; Aris KOULAS-SIMOS; Arsenty KAGANSKIY; Petr KLENOVSKÝ a Stephan REITZENSTEIN. Self-Aligned Photonic Defect Microcavity Lasers with Site-Controlled Quantum Dots. Laser and Photonics Reviews. Wiley, 2024, roč. 18, č. 7, s. 1-11. ISSN 1863-8880. Dostupné z: https://doi.org/10.1002/lpor.202301242.

PODHORSKÝ, M.; M. KLONZ; I. LIMAME; S. TRIPATHI; K. GAUR; Ch. C. PALEKAR; P. MUDI; Petr KLENOVSKÝ; S. RODT a S. REITZENSTEIN. Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources. Online. In Behulova M., Behulova M., Kozisek Z. 33rd Joint Seminar Development of Materials Science in Research and Education, DMSRE 2024. IOP Publishing, 2024, s. 1-8. Dostupné z: https://doi.org/10.1088/1742-6596/2931/1/012016.

SALA, Elisa Maddalena a Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. New Journal of Physics. IOP Publishing Ltd, 2023, roč. 25, č. 11, s. 113012-113028. ISSN 1367-2630. Dostupné z: https://doi.org/10.1088/1367-2630/ad0856.

YUAN, Xueyong; Saimon F. Covre da SILVA; Diana CSONTOSOVÁ; Huiying HUANG; Christian SCHIMPF; Marcus REINDL; Junpeng LU; Zhenhua NI; Armando RASTELLI a Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. Physical Review B. American Physical Society, 2023, roč. 107, č. 23, s. "235412-1"-"235412-12", 12 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.107.235412.

STEINDL, Petr a Petr KLENOVSKÝ. Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots. Nanomaterials. MDPI, 2022, roč. 12, č. 4, s. 1-6. ISSN 2079-4991. Dostupné z: https://doi.org/10.3390/nano12040719.

KLENOVSKÝ, Petr; Piotr BARANOWSKI a Piotr WOJNAR. Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots. Physical Review B. American Physical Society, 2022, roč. 105, č. 19, s. "195403-1"-"195403-10", 10 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.105.195403.

KLENOVSKÝ, Petr; Jakub VALDHANS; Lucie KREJČÍ; Miroslav VALTR; Petr KLAPETEK a Olga FEDOTOVA. Interplay between multipole expansion of exchange interaction and Coulomb correlation of exciton in colloidal II–VI quantum dots. Electronic Structure. IOP Publishing Ltd, 2022, roč. 4, č. 1, s. 1-12. ISSN 2516-1075. Dostupné z: https://doi.org/10.1088/2516-1075/ac5b7e.

MITTELSTÄDT, Alexander; Andrei SCHLIWA a Petr KLENOVSKÝ. Modeling electronic and optical properties of III–V quantum dots—selected recent developments. Light: Science & Applications. Springer Nature, 2022, roč. 11, č. 1, s. 1-14. ISSN 2095-5545. Dostupné z: https://doi.org/10.1038/s41377-021-00700-9.

HUANG, Huiying; Diana CSONTOSOVÁ; Santanu MANNA; Yongheng HUO; Rinaldo TROTTA; Armando RASTELLI a Petr KLENOVSKÝ. Electric field induced tuning of electronic correlation in weakly confining quantum dots. Physical Review B. American Physical Society, 2021, roč. 104, č. 16, s. 165401-165411. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.104.165401.

STEINDL, Petr; Elisa Maddalena SALA; Benito ALÉN; Dieter BIMBERG a Petr KLENOVSKÝ. On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001). New Journal of Physics. IOP Publishing Ltd., 2021, roč. 23, č. 10, s. 103029-103044. ISSN 1367-2630. Dostupné z: https://doi.org/10.1088/1367-2630/ac2bd6.

GAJJELA, Raja S. R.; Arthur L. HENDRIKS; James O. DOUGLAS; Elisa M. SALA; Petr STEINDL; Petr KLENOVSKÝ; Paul A. J. BAGOT; Michael P. MOODY; Dieter BIMBERG a Paul M. KOENRAAD. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. Light: Science & Applications. Springer Nature, 2021, roč. 10, č. 1, s. 1-13. ISSN 2047-7538. Dostupné z: https://doi.org/10.1038/s41377-021-00564-z.

CSONTOSOVÁ, Diana a Petr KLENOVSKÝ. Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots. Physical Review B. American Physical Society, 2020, roč. 102, č. 12, s. "125412-1"-"125412-15", 15 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.102.125412.

HACKL, Florian; Martyna GRYDLIK; Petr KLENOVSKÝ; Friedrich SCHAEFFLER; Thomas FROMHERZ a Moritz BREHM. Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots. Annalen der Physik (Berlin). 2019, roč. 531, č. 6, s. 1-12. ISSN 0003-3804. Dostupné z: https://doi.org/10.1002/andp.201800259.

KLENOVSKÝ, Petr; Andrei SCHLIWA a Dieter BIMBERG. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots. Physical Review B. American Physical Society, 2019, roč. 100, č. 11, s. 115424-115437. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.100.115424.

RAUTERT, Janina; Timur S. SHAMIRZAEV; S. V. NEKRASOV; Dmitri R. YAKOVLEV; Petr KLENOVSKÝ; Yu. G. KUSRAYEV a Manfred BAYER. Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment. Physical Review B. American Physical Society, 2019, roč. 99, č. 19, s. 195411-195420. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.99.195411.

STEINDL, Petr; Elisa Maddalena SALA; Benito ALÉN; David FUERTES MARRÓN; Dieter BIMBERG a Petr KLENOVSKÝ. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. Physical Review B. American Physical Society, 2019, roč. 100, č. 19, s. 195407-195425. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.100.195407.

SCHIMPF, Christian; Marcus REINDL; Petr KLENOVSKÝ; Thomas FROMHERZ; Saimon F. Covre DA SILVA; Julian HOFER; Christian SCHNEIDER; Sven HOEFLING; Rinaldo TROTTA a Armando RASTELLI. Resolving the temporal evolution of line broadening in single quantum emitters. Optics Express. 2019, roč. 27, č. 24, s. 35290-35307. ISSN 1094-4087. Dostupné z: https://doi.org/10.1364/OE.27.035290.

HUBER, Daniel; Barbara Ursula LEHNER; Diana CSONTOSOVÁ; Marcus REINDL; Simon SCHULER; Saimon Filipe COVRE DA SILVA; Petr KLENOVSKÝ a Armando RASTELLI. Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots. Physical Review B. American Physical Society, 2019, roč. 100, č. 23, s. 1-9. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.100.235425.

KLENOVSKÝ, Petr; Petr STEINDL; Johannes ABERL; Eugenio ZALLO; Rinaldo TROTTA; Armando RASTELLI a Thomas FROMHERZ. Effect of second-order piezoelectricity on the excitonic structure of stress-tuned In(Ga)As/GaAs quantum dots. Physical Review B. College PK: AMER PHYSICAL SOC, 2018, roč. 97, č. 24, s. 245314-245319. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.97.245314.

KLENOVSKÝ, Petr; Jaroslav ZŮDA; Petr KLAPETEK a Josef HUMLÍČEK. Ellipsometry of surface layers on a 1-kg sphere from natural silicon. Applied Surface Science. AMSTERDAM: ELSEVIER SCIENCE BV, 2017, roč. 421, January, s. 542-546. ISSN 0169-4332. Dostupné z: https://doi.org/10.1016/j.apsusc.2016.08.135.

KLENOVSKÝ, Petr; Petr STEINDL a Dominique GEFFROY. Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots. Scientific Reports. London: Nature Publishing Group, 2017, roč. 7, March, s. nestránkováno, 10 s. ISSN 2045-2322. Dostupné z: https://doi.org/10.1038/srep45568.

ABERL, Johannes; Petr KLENOVSKÝ; Johannes S. WILDMANN; Javier MARTÍN-SÁNCHEZ; Thomas FROMHERZ; Eugenio ZALLO; Josef HUMLÍČEK; Armando RASTELLI a Rinaldo TROTTA. Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect. Physical Review B. COLLEGE PK, MD USA: AMER PHYSICAL SOC, 2017, roč. 96, č. 4, s. nestránkováno, 6 s. ISSN 2469-9950. Dostupné z: https://doi.org/10.1103/PhysRevB.96.045414.

KŘÁPEK, Vlastimil; Petr KLENOVSKÝ a Tomáš ŠIKOLA. Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure. ACTA PHYSICA POLONICA A. Warsaw: POLISH ACAD SCIENCES INST PHYSICS, 2016, roč. 129, 1A, s. "A66"-"A69", 4 s. ISSN 0587-4246. Dostupné z: https://doi.org/10.12693/APhysPolA.129.A-66.

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK a Josef HUMLÍČEK. Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules. ACTA PHYSICA POLONICA A. Warsaw: POLISH ACAD SCIENCES INST PHYSICS, 2016, roč. 129, 1A, s. "A62"-"A65", 4 s. ISSN 0587-4246. Dostupné z: https://doi.org/10.12693/APhysPolA.129.A-62.

KŘÁPEK, Vlastimil; Petr KLENOVSKÝ a Tomáš ŠIKOLA. Excitonic fine structure splitting in type-II quantum dots. Physical Review B. COLLEGE PK: The American Physical Society, 2015, roč. 92, č. 19, s. "nestránkováno", 9 s. ISSN 1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.92.195430.

KLENOVSKÝ, Petr; Dušan HEMZAL; Petr STEINDL; Markéta ZÍKOVA; Vlastimil KŘÁPEK a Josef HUMLÍČEK. Polarization anisotropy of the emission from type-II quantum dots. Physical Review B. COLLEGE PK: The American Physical Society, 2015, roč. 92, č. 24, s. "nestránkováno", 5 s. ISSN 1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.92.241302.

KLENOVSKÝ, Petr; Moritz BREHM; Vlastimil KŘÁPEK; Elisabeth LAUSECKER; Dominik MUNZAR; Florian HACKL; Hubert STEINER; Thomas FROMHERZ; Günther BAUER a Josef HUMLÍČEK. Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition. Physical Review B. USA: The American Physical Society, 2012, roč. 86, č. 11, s. "nestránkováno", 8 s. ISSN 1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.86.115305.

HUMLÍČEK, Josef; Petr KLENOVSKÝ a Dominik MUNZAR. ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS. In 3rd International Conference on NANOCON. SLEZSKA: TANGER LTD, 2011, s. 39-44. ISBN 978-80-87294-27-7.

PLUMHOF, Johannes David; Vlastimil KŘÁPEK; Fei DING; K. D. JOENS; R. HAFENBRAK; Petr KLENOVSKÝ; A. HERKLOTZ; K. DORR; P. MICHLER; Armando RASTELLI a Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B. USA: American Physical Society, 2011, roč. 83, č. 12, s. "nestrankovano", 4 s. ISSN 1098-0121. Dostupné z: https://doi.org/10.1103/PhysRevB.83.121302.

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK; Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, roč. 97, č. 203107, 3 s. ISSN 0003-6951.

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK; Dominik MUNZAR a Josef HUMLÍČEK. Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Journal of Physics: Conference Series. Institute of Physics Publishing, 2010, roč. 244, č. 012086, 4 s. ISSN 1742-6588.

KŘÁPEK, Vlastimil; Petr KLENOVSKÝ; Armando RASTELLI; Oliver G SCHMIDT a Dominik MUNZAR. Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. Journal of Physics: Conference Series. Institute of Physics Publishing, 2010, roč. 245, č. 012027, 4 s. ISSN 1742-6588.

KLAPETEK, Petr; Miroslav VALTR; Petr KLENOVSKÝ a Jiří BURŠÍK. Characterization of near field optical microscope probes. Surface and Interface Analysis. USA: John Wiley & Sons., 2008, roč. 40, č. 1, s. 482-485. ISSN 0142-2421.